AMORPHOUS OXIDE THIN FILM TRANSISTOR AND METHOD OF FABRICATING THE SAME

摘要

PURPOSE: An amorphous oxide thin film transistor and a manufacturing method thereof are provided to be applied to a large display by using an amorphous oxide semiconductor as an active layer. CONSTITUTION: A gate electrode(121) is formed on a substrate(110). A gate insulation layer(115) is formed on the gate electrode. An active layer(124) comprised of an amorphous oxide semiconductor is formed on the gate insulation layer. The amorphous oxide semiconductor is formed by adding an acceptor dopant to a ZnO based oxide semiconductor with crystallization. A source electrode(122) and a drain electrode(123) are electrically connected to the preset area of the active layer.