发明名称 MEASURING DEVICE AND METHOD FOR OXIDE ETCHING RATE OF STEEL MATERIALS
摘要 PURPOSE: A device and method for measuring the oxide film etching rate of a steel material are provided to monitor the change amount of oxygen concentration by the light emitting spectrum of plasma in real time, thereby easily checking the etching rate of a steel material. CONSTITUTION: Plasma(7) is generated around a steel material(3) passing a chamber(1). The light emitting spectrum of the plasma is detected. The strength of the spectrum is compared with the strength of a specific peak wavelength of oxygen. A magnetic field is formed around the steel material to collect the plasma.
申请公布号 KR20110070355(A) 申请公布日期 2011.06.24
申请号 KR20090127158 申请日期 2009.12.18
申请人 POSCO 发明人 KIM, KYOUNG BO;LEE, DONG YOEUL;KIM, TAE YEOB;JUNG, WOO SUNG;EOM, MUN JONG;JUNG, YONG HWA;KWAK, YOUNG JIN;NAM, KYUNG HOON;NAM, YANG WOO;LEE, SANG CHEOL;PARK, SANG HOON
分类号 H01L21/66;G01J3/28;G01N33/20 主分类号 H01L21/66
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