MEASURING DEVICE AND METHOD FOR OXIDE ETCHING RATE OF STEEL MATERIALS
摘要
PURPOSE: A device and method for measuring the oxide film etching rate of a steel material are provided to monitor the change amount of oxygen concentration by the light emitting spectrum of plasma in real time, thereby easily checking the etching rate of a steel material. CONSTITUTION: Plasma(7) is generated around a steel material(3) passing a chamber(1). The light emitting spectrum of the plasma is detected. The strength of the spectrum is compared with the strength of a specific peak wavelength of oxygen. A magnetic field is formed around the steel material to collect the plasma.
申请公布号
KR20110070355(A)
申请公布日期
2011.06.24
申请号
KR20090127158
申请日期
2009.12.18
申请人
POSCO
发明人
KIM, KYOUNG BO;LEE, DONG YOEUL;KIM, TAE YEOB;JUNG, WOO SUNG;EOM, MUN JONG;JUNG, YONG HWA;KWAK, YOUNG JIN;NAM, KYUNG HOON;NAM, YANG WOO;LEE, SANG CHEOL;PARK, SANG HOON