| 摘要 |
<p>PURPOSE: A thin film transistor substrate and manufacturing method thereof, and organic light emitting device using the same are provided to make the thickness of a gate electrode thin, thereby preventing cracks on a gate insulating film formed on the gate electrode when laser is irradiated. CONSTITUTION: A data line(240) and a power line(241) are alternatively and vertically arranged. A gate line(260) and an emission line(261) are alternatively and horizontally arranged. A switching thin film transistor comprises a first switching thin film transistor(S1-T), a second switching thin film transistor(S2-T), and a third switching thin film transistor(S3-T). A driving thin film transistor(D-T) comprises a first gate electrode(210d), a drain electrode(244d), and a second gate electrode(265). An organic light emitting diode is connected to the drain electrode of the driving thin film transistor through a sixth contact hole(226).</p> |
