METHOD FOR MANUFACTURING OF THIN FILM TRANSISTOR

摘要

PURPOSE: A method for manufacturing a thin film transistor and a flat display is provided to prevent a process failure and improve the performance of a device by crystallizing a channel layer using infrared laser. CONSTITUTION: A gate electrode(11) is formed a substrate(10). A gate insulation layer(12), an amorphous silicon layer(14), and a first insulation layer(17) are successively formed on the gate electrode. The amorphous silicon layer on the upper side of the gate electrode is crystallized by scanning laser(200) from one side to the other side of the substrate. An etch stop pattern is formed on the upper side of the gate electrode by performing a mask process on the substrate which is crystallized. A doped amorphous silicon layer and a source/drain metal layer are successively formed on the substrate with the etch stop pattern.