METHOD FOR MENUFACTURING RESISTIVE MEMORY DEVICE

摘要

PURPOSE: A method for manufacturing a resistive memory device is provided to reduce manufacturing costs by forming a resistive layer through an oxidation process after a top electrode, transition metal, and an upper electrode are formed. CONSTITUTION: A bottom electrode(11) is comprised of a metal layer including oxygen ions. Transition metal is formed on the bottom electrode. A top electrode(13) is formed on the transition metal. A transition metal oxide layer is formed by oxidizing the transition metal. The transition metal is oxidized by applying voltages to the top electrode or bottom electrode.