| 摘要 |
<p>PURPOSE: A method for manufacturing an embedded flash memory device is provided to selectively eliminate poly silicon of a deflation area using a CDE(Chemical Downstream Etch) device. CONSTITUTION: A plurality of gate patterns includes a first oxide film, a nitride film, a second nitride film, and a first poly silicon. The gate patterns are formed on a semiconductor substrate(100). A third oxide film is formed on the frontal side of the semiconductor substrate with the gate patterns. Second poly silicon(280) is formed on the frontal surface of the third oxide film. The frontal surface of the third oxide film is etched. Second poly silicon is formed on the deflation area of the semiconductor substrate and is selectively eliminated by a CDE process.</p> |
