| 摘要 |
PURPOSE: An image sensor and manufacturing method thereof are provided to lower the refractive index of an insulating layer using HR-OxyNit(Hydrogen-Riched- Oxy-Nitride), thereby minimizing interference. CONSTITUTION: A semiconductor substrate(100) includes a device separation film(110), a photodiode, and a transistor(130). Insulation layers(140) are formed on the semiconductor layer. The insulation layers have a plurality of laminated structures. A color filter layer and a micro lens are successively formed on the insulation layer. The top insulation layer and the bottom insulation layer include HR-OxyNit. The other insulation layers except for the top insulation layer and the bottom insulation layer include a plurality of metal layers and a plurality of contact plugs(142).
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