METHOD OF COOLING PROCESS FOR SILICON SINGLE CRYSTAL

摘要

PURPOSE: A cooling process method of a silicon single crystal is provided to reduce or eliminate the thermal stress in a silicon single crystal, thereby preventing cracks during a crop process and a sawing process. CONSTITUTION: A heater for growing a single crystal is powered on after a tail process. The power of the heater decreases. The cooling speed of the silicon single crystal is controlled. The power of the heater decreases at least three times. The decreasing amount of power is set by 10~30kW.