| 摘要 |
The present invention relates to a novel electrical devices fabricated from polycrystalline silicon carbide (SiC) and methods for forming the same. The present invention provides a method for fabricating polycrystalline silicon carbide (SiC) products infiltrated with SiC-containing preceramic precursor resins to substantially mask the deleterious effects of trace contaminants, typically nitrogen and aluminum, while reducing operative porosity and enhancing manufacturing ease.
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