发明名称 |
Method of Forming an Electrical Fuse and a Metal Gate Transistor and the Related Electrical Fuse |
摘要 |
The present invention provides a method of integrating an electrical fuse process into a high-k/metal gate process. The method simultaneously forms a dummy gate stack of a transistor and a dummy gate stack of an e-fuse; and simultaneously removes the polysilicon of the dummy gate stack in the transistor region and the polysilicon of the dummy gate stack in the e-fuse region. Thereafter, the work function metal layer disposed in the opening of the e-fuse region is removed; and the opening in the transistor region and the opening in the e-fuse region with metal conductive structures are filled to form an e-fuse and a metal gate of a transistor.
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申请公布号 |
US2011147853(A1) |
申请公布日期 |
2011.06.23 |
申请号 |
US20090641322 |
申请日期 |
2009.12.18 |
申请人 |
UNITED MICROELECTRONICS CORPORATION |
发明人 |
LIN YUNG-CHANG;WU KUEI-SHENG;WONG CHANG-CHIEN |
分类号 |
H01L27/06;H01L21/768;H01L21/8234;H01L23/525 |
主分类号 |
H01L27/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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