Integrated Nitride and Silicon Carbide-Based Devices

摘要

Monolithic electronic devices are providing including a high bandgap layer. A first type of nitride device is provided on a first portion of the high bandgap layer, the first nitride device including first and second implanted regions respectively defining source and drain regions of the first type of nitride device. A second type of nitride device, different from the first type of nitride device, is provided on a second portion of the high bandgap layer, the second type of nitride device including an implanted highly conductive region. At least a portion of the implanted highly conductive region of the second type of nitride device is coplanar with at least a portion of both the first and second implanted regions of the first type of nitride device.