SEMICONDUCTOR LIGHT-EMITTING DEVICE

摘要

The present disclosure relates to a semiconductor light-emitting device comprising: a first conductive semiconductor layer; a second conductive semiconductor layer formed on the first conductive semiconductor layer; an active layer formed between the first conductive semiconductor layer and the second conductive semiconductor layer so as to emit light by electron-hole recombination; and at least two metal layers which penetrate through the active layer in the vertical direction.