| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a TFT array which increases a pixel aperture ratio and hardly causing capacitive crosstalk. <P>SOLUTION: The TFT array includes steps of: forming gate electrodes and gate address lines 7 on a transparent first substrate; forming a gate insulating layer on the first substrate including the gate electrodes; forming a semiconductor layer on the gate insulating layer; forming drain electrodes, source electrodes, drain address lines 5 and auxiliary storage capacitor electrodes 12 on the semiconductor layer; forming an organic insulating layer capable of forming a photo-image on the first substrate including the auxiliary storage capacitor electrodes 12; executing a photo-image process to the organic insulating layer to form contact holes 36 with surfaces of the auxiliary storage capacitor electrodes 12 exposed therefrom; and forming pixel electrodes 3 electrically connected to the upper parts of the auxiliary storage capacitor electrodes 12 through the contact holes. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
