发明名称 |
FORMING A CARBON CONTAINING LAYER TO FACILITATE SILICIDE STABILITY IN A SILICON GERMANIUM MATERIAL |
摘要 |
A method includes forming a silicon germanium layer, forming a layer comprising carbon and silicon on a top surface of the silicon germanium layer, forming a metal layer above the layer comprising carbon and silicon, and performing a thermal treatment to convert at least the layer comprising carbon and silicon to form a metal silicide layer.
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申请公布号 |
US2011147809(A1) |
申请公布日期 |
2011.06.23 |
申请号 |
US20090644092 |
申请日期 |
2009.12.22 |
申请人 |
YANG BIN;SADANA DEVENDRA;LAVOIE CHRISTIAN;OZCAN AHMET |
发明人 |
YANG BIN;SADANA DEVENDRA;LAVOIE CHRISTIAN;OZCAN AHMET |
分类号 |
H01L29/78;H01L21/20;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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