发明名称 Photovoltaic device back contact
摘要 A method for manufacturing a photovoltaic device may include depositing a semiconductor absorber layer on a substrate, depositing a molybdenum in the presence of a nitrogen to form a molybdenum nitride in contact with the semiconductor absorber layer, and doping the molybdenum nitride with a copper dopant.
申请公布号 US2011146784(A1) 申请公布日期 2011.06.23
申请号 US20100970793 申请日期 2010.12.16
申请人 FIRST SOLAR, INC. 发明人 ADDEPALLI PRATIMA V.;KARPENKO OLEH P.;SHIELDS THOMAS W.
分类号 H01L31/0224;H01L31/0272 主分类号 H01L31/0224
代理机构 代理人
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