| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a storage element and a storage device, reducing irregularities in a resistance value in the initial state or the erased state of a plurality of storage elements, and at the same time preserving the resistance value in a write-in and an erased stages to a plurality times of write-in and erasing operations. <P>SOLUTION: A first high-resistance layer 22A comprising cadmium oxide (Gd-O) is formed in a storage layer 20, together with a second high-resistance layer 22B comprising aluminum oxide (Al-O) or silicon oxide (Si-O). Defects in the first high-resistance layer 22A are complemented by the second high-resistance layer 22B, to improve constitutional uniformity, and to reduce the irregularities in the resistance value in the initial state and the erased state of a plurality of storage elements 1. The increase in the defects is suppressed and the characteristics to preserve the resistance value are improved to a plurality times of write-in and erasing operations, when the write-in and the erasing operations are performed repeatedly. <P>COPYRIGHT: (C)2011,JPO&INPIT |
