| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a metal oxide semiconductor thin film in which the metal oxide semiconductor thin film can be formed only by a wet method, and a method of manufacturing a three-terminal type electronic device. SOLUTION: In the method of manufacturing the metal oxide semiconductor thin film, a metal oxide semiconductor forming the metal oxide semiconductor thin film is made to adsorb ligand molecules. Further, the method of manufacturing the electronic device having (A) a first electrode and a second electrode and (B) an active layer 20 provided between the first electrode and second electrode 16 includes a process of making the metal oxide semiconductor forming the active layer 20 to adsorb ligand molecules. COPYRIGHT: (C)2011,JPO&INPIT
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