发明名称 PLASMA TREATMENT APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus capable of suppressing the occurrence of contamination by a foreign matter or metal and continuously operating for a long period of time. SOLUTION: The plasma treatment apparatus includes a treatment chamber evacuated to given pressure, a suction device 2 which is placed in the treatment chamber and has an electrostatic chuck that sucks and holds a sample by electrostatic charges, a temperature adjusting means which adjusts the temperature of the suction device, a heat-transfer gas supply means which supplies a heat-transfer gas between the suction device and the sample placed on the suction device, and a means which generates plasma in the treatment chamber. The plasma treatment apparatus subjects the sample placed on the suction device to plasma treatment using the generated plasma. The plasma treatment apparatus also includes a ring-shaped protective cover 118 protecting an outer peripheral portion of a sample bearing surface of the suction device, the outer peripheral portion being lower than the sample bearing surface. The cover has a V-shaped overhang 401 formed at its ring-shaped inner periphery which is fitted in a cutout 400 formed at the outer periphery of a suction surface of the electrostatic chuck across a gap. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011124274(A) 申请公布日期 2011.06.23
申请号 JP20090278646 申请日期 2009.12.08
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人 SAKAI YOSUKE;KITADA HIROO;NAKAMOTO KAZUNORI;TSUBONE TSUNEHIKO
分类号 H01L21/683;H01L21/3065 主分类号 H01L21/683
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