发明名称 |
METHOD OF CONTROLLING ETCH MICROLOADING FOR A TUNGSTEN-CONTAINING LAYER |
摘要 |
A method for etching features of different aspect ratios in a tungsten containing layer is provided. An etch gas is provided containing a tungsten etch component and a deposition component. A plasma is formed from the provided etch gas. A tungsten containing layer patterned with wide and narrow features is etched with the provided plasma.
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申请公布号 |
US2011151670(A1) |
申请公布日期 |
2011.06.23 |
申请号 |
US20080744012 |
申请日期 |
2008.11.13 |
申请人 |
LAM RESEARCH CORPORATION |
发明人 |
LEE WONCHUL;FU QIAN;LIU SHENJIAN;PU BRYAN |
分类号 |
H01L21/3065 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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