SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR LIGHT-EMITTING ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor substrate in which the planarity of each semiconductor layer that crystal-grows on a GaN substrate is improved, as much as equivalent to the size of a semiconductor element, and to provide a semiconductor light-emitting element and a semiconductor element having high-performance characteristics, with the semiconductor substrate as a base.

SOLUTION: A substrate 11, a nitride III-V compound semiconductor single-crystal layer 12 laminated on the substrate 11, and a layer 10 containing impurity elements of from 5x1017cm-3or more to 2x1019cm-3or less provided between the substrate 11 and the laer 12 are contained.

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