| 摘要 |
PROBLEM TO BE SOLVED: To reduce dilution of first and second reaction gases to avoid reduction in a deposition rate, wherein the dilution may be caused by a separation gas used to suppress mixing of the reaction gases. SOLUTION: A film deposition apparatus includes: a rotary table rotatably provided in a chamber and including a substrate mounting area, in which a substrate is mounted, on a first surface thereof; a first reaction gas supply portion supplying a first reaction gas to the first surface of the rotary table; a second reaction gas supply portion separated from the first reaction gas supply portion along the rotating direction of the rotary table and supplying a second reaction gas to the first surface of the rotary table; a separation gas supply portion provided between the first and second reaction gas supply portions and supplying a separation gas that separates the first and second reaction gases; an exhaust port for exhausting an inside of the chamber; and a space defining member provided for at least one of the first and second reaction gas supply portions and defining a first space including a space between the reaction gas supply portion and the first surface of the rotary table and a second space where the separation gas is likely to flow rather than the first space. COPYRIGHT: (C)2011,JPO&INPIT |
