| 摘要 |
PROBLEM TO BE SOLVED: To provide an FET capable of switching operation of a high breakdown voltage and a high current and facilitating manufacture. SOLUTION: The field effect transistor includes a first conductive source region (1) positioned on a main surface of a semiconductor of thin body, a first conductive channel region (10), a second conductive defined region (5) to define the channel region, a first conductive drain region (3) located on the other main surface, a first conductive drift region (4) being continuous in a direction of thickness. The concentration of impurity of the drift region (4) and channel region (10) is less than the concentration of impurity of the source region (1), drain region (3), and defined region (5), and the concentration of impurity of the channel region (10) is less than the drift region (4). COPYRIGHT: (C)2011,JPO&INPIT
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