发明名称 SILICON MATERIAL FOR INFRARED TRANSMITTING MEMBERS, AND INFRARED TRANSMITTING MEMBER
摘要 PROBLEM TO BE SOLVED: To provide a silicon material for an infrared transmitting member which secures transmittance for infrared of around 9 &mu;m wavelength and can be used for wide range of wavelength, and to provide an infrared transmitting member made of the silicon material. SOLUTION: A silicon material for an infrared transmitting member used for a material of infrared transmitting members such as an infrared transmitting lens, prism, or the like, includes a polycrystalline silicon. The resistivity of the polycrystalline silicon is 1 &Omega;cm or more and the oxygen concentration is less than 1.0&times;10<SP>18</SP>atoms/cc. COPYRIGHT: (C)2011,JPO&amp;INPIT
申请公布号 JP2011123185(A) 申请公布日期 2011.06.23
申请号 JP20090279522 申请日期 2009.12.09
申请人 MITSUBISHI MATERIALS CORP;MITSUBISHI MATERIALS ELECTRONIC CHEMICALS CO LTD 发明人 TSUZUKIBASHI KOJI;IKEDA HIROSHI;KANAI MASAHIRO;WAKITA SABURO;TOJO TETSUYA
分类号 G02B1/02;C01B33/02;C30B29/06 主分类号 G02B1/02
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