发明名称 |
SILICON MATERIAL FOR INFRARED TRANSMITTING MEMBERS, AND INFRARED TRANSMITTING MEMBER |
摘要 |
PROBLEM TO BE SOLVED: To provide a silicon material for an infrared transmitting member which secures transmittance for infrared of around 9 μm wavelength and can be used for wide range of wavelength, and to provide an infrared transmitting member made of the silicon material. SOLUTION: A silicon material for an infrared transmitting member used for a material of infrared transmitting members such as an infrared transmitting lens, prism, or the like, includes a polycrystalline silicon. The resistivity of the polycrystalline silicon is 1 Ωcm or more and the oxygen concentration is less than 1.0×10<SP>18</SP>atoms/cc. COPYRIGHT: (C)2011,JPO&INPIT |
申请公布号 |
JP2011123185(A) |
申请公布日期 |
2011.06.23 |
申请号 |
JP20090279522 |
申请日期 |
2009.12.09 |
申请人 |
MITSUBISHI MATERIALS CORP;MITSUBISHI MATERIALS ELECTRONIC CHEMICALS CO LTD |
发明人 |
TSUZUKIBASHI KOJI;IKEDA HIROSHI;KANAI MASAHIRO;WAKITA SABURO;TOJO TETSUYA |
分类号 |
G02B1/02;C01B33/02;C30B29/06 |
主分类号 |
G02B1/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|