Static IR (voltage) drop Analyzing Apparatus and Associated Method

摘要

A static voltage drop analyzing apparatus applied to a Multi-Threshold Complementary Metal-Oxide-Semiconductor (MTCMOS) transistor is provided. The static voltage drop analyzing apparatus includes a calculating module, a processing module, and a measuring module. The calculating module calculates a voltage drop tolerance according to the voltage drop characteristic of the MTCMOS transistor. The processing module selects a simulation metal layer corresponding to the voltage drop tolerance from a plurality of candidate simulation metal layers, and adds the simulation metal layer into the MTCMOS transistor. The measuring module measures the voltage drop of the simulation metal layer added into the MTCMOS transistor. The measured voltage drop of the simulation layer added into the MTCMOS is substantially the static voltage drop of the MTCMOS transistor.