发明名称 METHOD FOR FORMING A SELECTIVE EMITTER FOR A SOLAR CELL
摘要 The method for forming a selective emitter for a solar cell according to the present invention comprises the steps of: preparing a crystalline silicon substrate of a first conductive type; forming a low-density ion implantation layer of a second conductive type in the substrate; forming a high-density semiconductor layer by irradiating a laser onto the surface of the substrate in a location where a front electrode is to be formed, and so activating impurity ions in the low-density ion implantation layer of the second conductive type; and forming a semiconductor layer of the second conductive type by subjecting the substrate to a heat treatment and so activating the low-density ion implantation layer of the second conductive type.
申请公布号 WO2011074909(A2) 申请公布日期 2011.06.23
申请号 WO2010KR09065 申请日期 2010.12.17
申请人 HYUNDAI HEAVY INDUSTRIES CO., LTD.;LEE, JOON SUNG;OH, HOON;CHO, EUN CHEL;LEE, WON JAE;JEON, MIN SUNG 发明人 LEE, JOON SUNG;OH, HOON;CHO, EUN CHEL;LEE, WON JAE;JEON, MIN SUNG
分类号 H01L31/042 主分类号 H01L31/042
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