SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SAME
摘要
<p>Disclosed is a semiconductor device having an element formation region (1A) wherein an element is formed on a semiconductor wafer (1), and a scribe region (3) formed on the periphery of the element formation region (1A) on the semiconductor wafer (1). Furthermore, the semiconductor device has a protective film (2) which is formed on and protects the element formation region (1A) and the scribe region (3).</p>
申请公布号
WO2011074155(A1)
申请公布日期
2011.06.23
申请号
WO2010JP04730
申请日期
2010.07.23
申请人
PANASONIC CORPORATION;HIRANO, HIROSHIGE;ITOU, FUMITO;OTA, YUKITOSHI;KOIKE, KOJI
发明人
HIRANO, HIROSHIGE;ITOU, FUMITO;OTA, YUKITOSHI;KOIKE, KOJI