SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND PRODUCTION METHOD FOR SEMICONDUCTOR SUBSTRATE

摘要

In order to improve surface flatness and increase the reliability of a semiconductor device in cases in which different types of semiconductor crystal layers are epitaxially grown upon a single silicon substrate, a semiconductor substrate is disclosed that is provided with a base substrate having, on the surface thereof, a silicon crystal in which a first depression and a second depression have been formed, a first Group IVB semiconductor crystal formed in an exposed manner in the interior of the first depression, a second Group IVB semiconductor crystal formed in the interior of the second depression, and a Group III-V compound semiconductor crystal formed in an exposed manner upon the second Group IVB semiconductor crystal in the interior of the second depression.