AN ACTIVE MATRIX DISPLAY DEVICE

摘要

PURPOSE: An active matrix display device is provided to make a semiconductor device with a thin film transistor with superior electrical features using a laminated oxide semiconductor layer. CONSTITUTION: A first gate electrode(401) and a second gate electrode(101) are formed on a substrate(400). A gate insulating layer(403) covers the first gate electrode and the second gate electrode. An oxide semiconductor layer(405) is formed on the gate insulating layer. An insulating layer(473) including aluminium oxide is formed on the oxide semiconductor layer. A pixel electrode(474) electrically contacts the oxide semiconductor layer.