| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a flat panel display device including a capacitor having structure of a thin film transistor and MOS (Metal-Oxide-Semiconductor) and a method of manufacturing the same. <P>SOLUTION: A flat panel display device includes an active layer formed by a semiconductor on a substrate of a first region, a lower part electrode formed by a semiconductor on a substrate of a second region, a first insulating layer formed on an upper part including the active layer and the lower part electrode, a gate electrode formed by a first conductive layer and a second conductive layer on the first insulating layer on the active layer, an upper electrode formed by the first conductive layer on the first insulating layer on the lower part electrode, a second insulating layer formed on an upper part including the gate electrode and the upper part electrode and patterned so that the active layer and the upper part electrode are exposed, and a source electrode and a drain electrode connected to the exposed active layer. <P>COPYRIGHT: (C)2011,JPO&INPIT |
