| 摘要 |
PROBLEM TO BE SOLVED: To provide a device with a structure that facilitates manufacture, does not raise a voltage between a source and a drain, and has stable current characteristics to reduce an S value for a FET. SOLUTION: The device includes a channel layer 101 formed in a semiconductor layer 100, a first gate electrode 103 formed on the channel layer 101, and a source 104 and a drain 105 disposed in the semiconductor layer 100 with the channel layer 101 therebetween. The semiconductor device also includes a second gate electrode 109 formed on the channel layer 101 between the first gate electrode 103 and the source 104, the second gate electrode 109 being insulated from the first gate electrode 103, and a third gate electrode 111 formed on the channel layer 101 between the first gate electrode 103 and the drain 105, the third gate electrode 111 being insulated from the first gate electrode 103. COPYRIGHT: (C)2011,JPO&INPIT |
