| 摘要 |
PROBLEM TO BE SOLVED: To provide a chain FeRAM type semiconductor storage device wherein the quality of a ferroelectric film is made uniform. SOLUTION: The semiconductor storage device 80 includes memory transistors TR1 and TR2 which are disposed adjacently in the same element formation region and have a pair of source/drain layers 5, and ferroelectric capacitors CAP1 and CAP2 connected through a via and a barrier metal film 13 to the other one of source/drain layers 5 of the memory transistors and one of the source/drain layers 5 of the memory transistor TR2. The ferroelectric capacitors CAP1 and CAP2 are provided on the barrier metal film 13, and share a lower electrode 14 in a shape of a rectangular truncated pyramid and a ferroelectric film 15 provided covering the lower electrode 14, the ferroelectric capacitor CAP1 has a first upper electrode 16a provided on the ferroelectric film 15, and the ferroelectric capacitor CAP2 has a second upper electrode 16b provided on the ferroelectric film 15 and disposed apart from the first upper electrode 16a. COPYRIGHT: (C)2011,JPO&INPIT
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