发明名称 |
SEMICONDUCTOR DEVICE INCLUDING HIGH VOLTAGE AND LOW VOLTAGE MOS DEVICES |
摘要 |
Methods and devices for forming both high-voltage and low-voltage transistors on a common substrate using a reduced number of processing steps are disclosed. An exemplary method includes forming at least a first high-voltage transistor well and a first low-voltage transistor well on a common substrate separated by an isolation structure extending a first depth into the substrate, using a first mask and first implantation process to simultaneously implant a doping material of a first conductivity type into a channel region of the low-voltage transistor well and a drain region for the high-voltage transistor well.
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申请公布号 |
US2011151642(A1) |
申请公布日期 |
2011.06.23 |
申请号 |
US201113039525 |
申请日期 |
2011.03.03 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHANG CHANSAM;MAEDA SHIGENOBU;SHIN HEONJONG;OH CHANGBONG |
分类号 |
H01L21/265 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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