| 摘要 |
A semiconductor device includes an ELK film formed on a semiconductor substrate, a SiN film formed on the ELK film, and a plurality of interconnects formed in the ELK film and the SiN film to be located substantially at an equal height. The plurality of interconnects are provided in a non-dense interconnect region having a first interconnect area ratio which indicates a ratio of an area occupied by the interconnects per unit area, and a dense interconnect region having a second interconnect area ratio which is higher than the first interconnect area ratio. A height of an upper surface of a part of the SiN film located in the dense interconnect region is lower than a height of an upper surface of a part of the SiN film located in the non-dense interconnect region.
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