发明名称 |
Non-Volatile Memory Cell Having a Heating Element and a Substrate-Based Control Gate |
摘要 |
The number of times that a non-volatile memory (NVM) can be programmed and erased is substantially increased by utilizing a localized heating element that anneals the oxide that is damaged by tunneling charge carriers when the NVM is programmed and erased. The program and erase voltages are also reduced when heat from the heating element is applied prior to programming and erasing.
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申请公布号 |
US2011147820(A1) |
申请公布日期 |
2011.06.23 |
申请号 |
US201113037199 |
申请日期 |
2011.02.28 |
申请人 |
BABCOCK JEFFREY A;MIRGORODSKI YURI;LAVROVSKAYA NATALIA;DESAI SAURABH |
发明人 |
BABCOCK JEFFREY A.;MIRGORODSKI YURI;LAVROVSKAYA NATALIA;DESAI SAURABH |
分类号 |
H01L29/788 |
主分类号 |
H01L29/788 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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