发明名称 GAS BARRIER FILM, METHOD FOR PRODUCING GAS BARRIER FILM, AND ORGANIC PHOTOELECTRIC CONVERSION ELEMENT
摘要 <p>Disclosed is a gas barrier film which has both high gas barrier performance and high cracking (bending) resistance. Specifically disclosed is a gas barrier film which comprises, on a base in the following order, at least one silanol-containing layer and at least one gas barrier layer that contains silicon atoms and hydrogen atoms. The gas barrier film is characterized in that the relative SiOH ion intensity in the central part of the silanol-containing layer in the film thickness direction as detected by time-of-flight secondary ion mass spectrometry (Tof-SIMS) is 0.02-1.0 when the relative Si ion intensity is taken as 1. Also disclosed is an organic photoelectric conversion element which comprises the gas barrier film.</p>
申请公布号 WO2011074440(A1) 申请公布日期 2011.06.23
申请号 WO2010JP71875 申请日期 2010.12.07
申请人 KONICA MINOLTA HOLDINGS, INC.;TAKEMURA CHIYOKO;KAWAMURA TOMONORI 发明人 TAKEMURA CHIYOKO;KAWAMURA TOMONORI
分类号 B32B9/00;H01L51/50;H05B33/02 主分类号 B32B9/00
代理机构 代理人
主权项
地址