| 摘要 |
PROBLEM TO BE SOLVED: To provide an SiC epitaxial wafer in which triangular defect and stacking fault are reduced, and the uniformity of carrier concentration and film thickness is high, and which is step bunching-free, and to provide its manufacturing method. SOLUTION: The method of manufacturing the SiC epitaxial wafer comprises forming an SiC epitaxial layer on a 4H-SiC single crystal substrate made to incline by 0.4-5°of an off angle, and is characterized in that silicon containing gas and carbon containing gas which are an amount needed for epitaxial growth of silicon carbide are supplied on the substrate in which the surface thereof has been cleaned by gas etching so that the atomic ratio C/Si of carbon to silicon may be 0.7-1.2, and epitaxial growth of a silicon carbide film is carried out at the temperature of at least 1,600°C and at most 1,800°C. Thereby, the defect density of the triangle shape of the surface of the SiC epitaxial layer becomes at most one/cm<SP>2</SP>. COPYRIGHT: (C)2011,JPO&INPIT
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