| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus and method for manufacturing a compound semiconductor, wherein even when deposition is stuck to the inner wall of a casing or to the surface of a tool or the like in a chamber, the deposition is simply removed without generating breakage or fracture caused by the deposition. SOLUTION: Either one or both gases of NH<SB>3</SB>gas and HCl gas are set so as to be supplied into the chamber 1 in which a substrate 10 to be processed is arranged, and at least the surface of an inner wall in the chamber 1 to which the gas is supplied and/or at least the surface of a tool such as a holder 11 to be brought into contact with a part of the substrate 10 and/or at least the surface of a structure arranged in the chamber 1 is composed of Ir (iridium) metal having the surface roughness (Ra) of 0.5 to 100μm. COPYRIGHT: (C)2011,JPO&INPIT
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