发明名称 |
METAL GATE FILL AND METHOD OF MAKING |
摘要 |
The present disclosure provides various methods of fabricating a semiconductor device. A method of fabricating a semiconductor device includes providing a semiconductor substrate and forming a gate structure over the substrate. The gate structure includes a first spacer and a second spacer formed apart from the first spacer. The gate structure also includes a dummy gate formed between the first and second spacers. The method also includes removing a portion of the dummy gate from the gate structure thereby forming a partial trench. Additionally, the method includes removing a portion of the first spacer and a portion of the second spacer adjacent the partial trench thereby forming a widened portion of the partial trench. In addition, the method includes removing a remaining portion of the dummy gate from the gate structure thereby forming a full trench. A high k film and a metal gate are formed in the full trench.
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申请公布号 |
US2011151655(A1) |
申请公布日期 |
2011.06.23 |
申请号 |
US20090641560 |
申请日期 |
2009.12.18 |
申请人 |
CHAN BOR-WEN;TSAU HSUEH WEN;HSU KUANG-YUAN |
发明人 |
CHAN BOR-WEN;TSAU HSUEH WEN;HSU KUANG-YUAN |
分类号 |
H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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