| 摘要 |
<p>Provided is a method for manufacturing a piezoelectric device, with which an extremely thin-film piezoelectric device that has an extremely thin piezoelectric monocrystal thin film on an SOI substrate can be manufactured at low cost. Ion injection depth is determined by ion injection energy, and an ion-injected layer (100) can be formed at a desired depth by varying the ion injection energy. In a peeling process, a piezoelectric monocrystal thin film (10) is formed on an SOI substrate (2) by peeling off the ion-injected layer (100) as a peeled-off surface. In other words, since the thickness of the piezoelectric monocrystal thin film (10) is determined by the ion injection energy, the thickness of the piezoelectric monocrystal thin film (10) can be freely adjusted. Consequently, according to this manufacturing method, an extremely thin piezoelectric monocrystal thin film (10) having the desired thickness can be formed on the SOI substrate (2) by means of ion injection, bonding, and peeling. In addition, monocrystal piezoelectric material can be conserved because a piezoelectric monocrystal substrate (1') from which the piezoelectric monocrystal thin film (10) has been peeled can be reused in the ion injection process.</p> |
