| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for producing a semiconductor device such as a RC-IGBT or a BIGT without using masking technique. <P>SOLUTION: The semiconductor device, such as the RC-IGBT or BIGT, has both partial regions 15 doped with dopants of a first conductivity type and regions 13 doped with dopants of a second conductivity type on the same side of a semiconductor substrate 7. The method includes (a) implanting dopants of the first conductivity type and implanting dopants of the second conductivity type into the surface 3 to be patterned. The method includes (b) locally activating dopants of the first conductivity type by locally heating the partial region 15 of the surface to be patterned using a laser beam similar to those used in laser annealing. Further, the method includes (c) activating the dopants of the second conductivity type by heating the substrate 7 to a second temperature lower than a first temperature. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
