CRUCIBLE FOR PULLING SINGLE CRYSTAL, AND METHOD FOR PULLING SINGLE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide a crucible for pulling single crystal and a method for pulling single crystal in which even when a silicon raw material melt is continuously or intermittently supplied to a quartz crucible and the level height position of the silicon raw material melt is substantially in a constant state in the silicon crucible, the damage of the quartz crucible resulting from erosion of the inner wall can be suppressed. SOLUTION: The quartz crucible 20 is provided with a side wall reinforcement part 22 composed of a quartz material at a predetermined height position H on the periphery of a side wall, forming a thick side wall part 23 in a part of the side wall. When the silicon single crystal 5 is pulled, the quartz crucible 20 is heated and softened, and the thick side wall part 23 is deformed according to the shape of the inner wall surface 30a of the graphite crucible 30 to thereby partially push out the thick side wall part 23 of the quartz crucible 20 to the inner surface side. COPYRIGHT: (C)2011,JPO&INPIT