发明名称 |
METAL GATE STRUCTURE OF A FIELD EFFECT TRANSISTOR |
摘要 |
The invention relates to integrated circuit fabrication, and more particularly to a Field Effect Transistor with a low resistance metal gate electrode. An exemplary structure for a gate electrode for a Field Effect Transistor comprises a lower portion formed of a first metal material having a recess and a first resistance; and an upper portion formed of a second metal material having a protrusion and a second resistance, wherein the protrusion extends into the recess, wherein the second resistance is lower than the first resistance.
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申请公布号 |
US2011147858(A1) |
申请公布日期 |
2011.06.23 |
申请号 |
US20090643414 |
申请日期 |
2009.12.21 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LIM PENG-SOON;LEE DA-YUAN;HSU KUANG-YUAN |
分类号 |
H01L29/49;H01L29/78 |
主分类号 |
H01L29/49 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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