| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor pressure sensor having less manufacture irregularity. SOLUTION: A silicon substrate 10 has a through hole 12. A polysilicon film 20 is formed on the silicon substrate 10. The polysilicon film 20 has a diaphragm 24 upward of the through hole 12. An insulation film 22 is formed on the polysilicon film 20. Polysilicon gauge resistors R1, R2, R3, R4 having piezoresistance effect are formed on the insulation film 22. Pieces of polysilicon wiring W1, W2, W3, W4 connect the polysilicon gauge resistors R1, R2, R3, R4 in the form of a bridge. The polysilicon gauge resistors R1, R2 are arranged in the center part of the diaphragm 24, have a plurality of resistors connected in parallel respectively, and their structures and directions are the same. COPYRIGHT: (C)2011,JPO&INPIT
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