MEMORY CELL THAT EMPLOYS A SELECTIVELY GROWN REVERSIBLE RESISTANCE-SWITCHING ELEMENT AND METHODS OF FORMING THE SAME

摘要

In some aspects, a memory cell is provided that includes (1) a steering element above a substrate; and (2) a reversible resistance-switching element coupled to the steering element, wherein the reversible resistance-switching element is selectively formed by: (a) forming a material layer on the substrate; (b) etching the material layer; and (c) oxidizing the etched material layer to form a reversible resistance-switching material. Numerous other aspects are provided.