SYSTEM AND METHOD FOR DOPING SEMICONDUCTOR MATERIALS

摘要

The invention relates to a system and to a method for doping substrates using a laser, wherein in the method at least one doping agent is in contact with the substrate surface and the substrate surface is locally heated by a laser beam. It is the aim of the present invention to provide a laser doping process, which allows for substrates to be doped at high speed, while generating a low dislocation density on the substrate surface, achieving good electrical activation of dopants, and moreover providing the option of deliberately doping certain regions to a higher degree. Said aim is achieved by a system for doping substrates using a laser, wherein the system comprises at least one fiber laser having a laser beam with a round beam cross-section and a scanner unit, by which a laser beam can scan the substrate surface, wherein the emitted light of the fiber laser has a wavelength in the range of 750 nm to 3000 nm. The aim is further achieved by a method for doping substrates, in which at least one doping agent is in contact with the substrate surface and the substrate surface is locally heated by a laser beam, wherein a fiber laser having a laser beam with a round beam cross-section is generated, which is guided over the substrate surface by a scanner unit, wherein the fiber laser emits light having a wavelength of 750 nm to 3000 nm.