摘要 |
<p>A polishing method and a polishing apparatus particularly suitable for finishing a surface of a substrate of a compound semiconductor containing an element such as Ga or the like to a desired level of flatness, so that a surface of a substrate of a compound semiconductor containing an element of Ga can be flattened with high surface accuracy within a practical processing time. In the presence of water (232) such as weak acid water, water with air dissolved therein, or electrolytic ion water, a surface of a substrate (142) made of a compound semiconductor containing either one of Ga, Al, and In and the surface of a polishing pad (242) having an electrically conductive member (264) in an area of the surface which is held in contact with the substrate (142) are relatively moved while being held in contact with each other, thereby polishing the surface of the substrate (142).</p> |
申请人 |
OSAKA UNIVERSITY;EBARA CORPORATION;SANO, YASUHISA;YAMAUCHI, KAZUTO;MURATA, JUNJI;OKAMOTO, TAKESHI;SADAKUNI, SHUN;YAGI, KEITA |
发明人 |
SANO, YASUHISA;YAMAUCHI, KAZUTO;MURATA, JUNJI;OKAMOTO, TAKESHI;SADAKUNI, SHUN;YAGI, KEITA |