| 摘要 |
PURPOSE: A chemical vapor deposition device is provided to prevent the leakage of source gas between a shadow frame and a substrate. CONSTITUTION: A process for forming a thin film on a substrate(100) is performed in a chamber(2). The chamber includes a susceptor(21) and a shower head(22). The shower head supplies source gas for forming the thin film on the substrate to the chamber. A shadow frame(3) includes a blocking surface for blocking the first region of the substrate from the source gas. The shadow frame includes a blocking surface(31) and a through hole. |
