THIN FILM TRANSISTOR WITH DUAL ELECTRODE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A thin film transistor applying a dual electrode structure and a manufacturing method thereof are provided to output large currents by the same gate voltage or drain voltage by applying the dual electrode structure to a source electrode and a drain electrode. CONSTITUTION: A gate electrode(11) is formed on a substrate(100). A gate insulation layer(12) covers the gate electrode. A first source electrode(13a) is separated from a first drain electrode(13b) on the gate insulation layer with a first distance. A channel layer(14) is located on the first source electrode, the gate insulation layer, and the first drain electrode. A second source electrode(15a) and a second drain electrode(15b) are located on the first source electrode, the channel layer, and the first drain electrode.