| 摘要 |
<p>PURPOSE: A flash memory device and a manufacturing method thereof are provided to prevent a source junction blocking by removing photoresist residue to which a physical impact is applied through a dry or wet etching process. CONSTITUTION: A device isolation layer is formed by gap-filling insulation materials in a semiconductor substrate(110). Gate patterns(130,132) are formed on the semiconductor substrate with the device isolation layer. A photoresist pattern(140) is formed to expose the common source region of the semiconductor substrate. A physical impact is applied to photoresist residue(145) by an implant process of high energy. The insulation materials are removed by an etching process using the photoresist pattern as a mask.</p> |
