| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method and device for plasma processing. <P>SOLUTION: The plasma processing device includes a processing chamber having an interior processing volume, a first RF coil 110 disposed proximate to the processing chamber to couple RF energy into the processing volume, and a second RF coil 112 disposed proximate to the processing chamber to couple RF energy into the processing volume. The second RF coil 112 is disposed coaxially with respect to the first RF coil 110, and the first and second RF coils 110, 112 are configured such that RF current flowing through the first RF coil 110 is out of phase with that flowing through the second RF coil 112. <P>COPYRIGHT: (C)2011,JPO&INPIT |
